, lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRF430 4.5a, 500v, 1.500 ohm, n-channel power mosfet this n-channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. features ? 4.5a, 500v ' rds(on)= ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ordering information part number IRF430 package to-204aa brand IRF430 note: when ordering, use the entire part number. symbol od g o packaging jedec to-204aa drain (flange) source (pin 2) gate (pin 1) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF430 absolute maximum ratings tc = 25c, unless otherwise specified drain to source breakdown voltage (note 1) drain to gate voltage (rgs = 20kq) (note 1 ) continuous drain current tc=100c .... pulsed drain current (note 3) gate to source voltage maximum power dissipation dissipation derating factor single pulse avalanche energy rating (note 4) .... operating and storage temperature maximum temperature for soldering leads at 0 063in (1 6mm) from case for 10s. . package body for 10s, see techbrief 334 vn<5 in in if-jiui vrs pn e ? -tj.tstg ti caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. thi device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. tj = 25cto125c. IRF430 units 500 v 500 v 4.5 a 3.0 a 18 a 20 v 75 w 0.6 w/c 300 mj -55 to 150 c 300 c 260 c is is a stress only rating and operation of the electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate threshold voltage gate to source leakage current zero gate voltage drain current on-state drain current (note 2) drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol bvdss vgs(th) 'gss 'dss ld(on) rds(on) 9fs 'd(on) tr 'd(off) tf qg(tot) qgs qgd ciss coss crss ld ls r8jc r9ja test conditions id = 250ua, vgs = ov (figure 10) vgs = vds. id = 250na vgs = 20v vds = rated bvdss, vgs = ov vds = 0-8 x rated bvdss> vgs = ov. tj = 125c vds > ld(on) x rds(on)max. vgs = 10v (figure 7) id = 2.5a, vgs = 10v (figures 8, 9) vds ^ 1v, id = 2-7a (figure 12) vdd = 250v, id = 4.5a, r (figures 17, 18)mosfet essentially independent o temperature vgs = 10v, id = 6.0a,vd lg(ref)= 1 -5ma (figures charge is essentially inde temperature vds = 25v, vgs = ov, f = measured between the contact screw on the flange that is closer to source and gate pins and the center of die measured from the source lead, 6mm (0.25in) from the flange and the source bonding pad 3 = 12q, rl = 50q switching times are : operating = 0.8 x rated bvdss> 14, 19, 20) gate pendent of operating 1 mhz (figure 11) modified mosfet symbol showing the internal devices inductances free air operation min 500 2.0 - - 4.5 - 2.5 - - - - - - - - - - - - typ - - - - - 1.3 3.2 11 15 35 15 22 3.5 11 600 100 30 5.0 12.5 - - max - 4.0 100 25 250 - 1.500 - 17 23 53 23 32 - - - - - 0.83 30 units v v na ua ua a n s ns ns ns ns nc nc nc pf pf pf nh nh c/w c/w
IRF430 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovery charge symbol !sd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction diode i o^i i )d ^ is tj = 25c, isd = 4.5a, ves = 0v (figure 13) tj = 25c, isd = 4.5a, d!sd/dt = 100a/us tj = 25c, isd = 4.5a, dlso/dt = looa/us win - - 180 0.96 typ - - 370 2 max 4.5 18 1.4 760 4.3 units a a v ns uc notes: 2. pulse test: pulse width < 300|js, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 50v, starting tj = 25c, l = 25mh, rg = 25q, peak ias = 4.5a. see figures 15, 16. typical performance curves unless otherwise specified a: "j 4 n power dissipation multipl o o o o - => k) * b> co ? \ 50 100 150 tc, case temperature (c) figure 1. normalized power dissipation vs case temperature id, drain current (a) o -* 10 w 4^ a l^*?? ^. ^ ^^x, ?^s "^ ?-v ^> x,, x \^ \ 25 50 75 100 125 tc, case temperature (c) 150 figure 2. maximum continuous drain current vs case temperature t,, rectangular pulse duration (s) figure 3. maximum transient thermal impedance
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